Assessing the quality of the excess chemical potential flux scheme for degenerate semiconductor device simulation

Abstract The van Roosbroeck system models current flows in (non-)degenerate semiconductor devices. Focusing on the stationary model, we compare excess chemical potential discretization scheme, a flux approximation which is based modification of drift term densities, with another state-of-the-art Scharfetter–Gummel namely diffusion-enhanced scheme. Physically, scheme can be interpreted as modifies thermal voltage. As reference solution consider an implicitly defined integral flux, using Blakemore statistics. refers to exact local two point boundary value problem for continuous density and generalized All numerical schemes used within Voronoi finite volume method simulate charge transport investigation includes analysis Taylor expansions, derivation error estimates visualization errors approximations extend previous discussions. Additionally, drift-diffusion simulations p–i–n device are performed.